Lab Updates

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    Virtual online conference series on - Aspects of Condensed Matter Physics in Quantum computing and sensing Link

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    Evidence of metal-to-insulator transition in the surface state of a topological insulator by proximity with a magnetic insulator. Link
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    Observation of zero-bias conductance peak in topologically-trivial hybrid superconducting interfaces. Link

Who we are.

"The mind that is open to new ideas never returns to its original size." - Albert Einstein

Lab Facilities

We design, assemble and integrate our UHV cluster vacuum systems. Our current system houses interconnected MBE, 8 target turret style DC/RF sputtering, oxygen plasma, ion milling/heating station and LT-STM.

Research areas

Our group research activity spans molecular spintronics, proximity effect studies at hybrid interfaces to explore topological nature of interface states using wide classes of materials viz. topological insulators, superconductors (s-type and pcnictides), ferromagnetic insulators and antiferromagnets.

UHV Cluster system

A custom built interconnected Ultra high vacuum systems for thin film growth and in-situ characterizations. This facility, unique in the country, allows in-situ transfer of samples between dedicated growth and characterization UHV chambers. Working with this sytem provides a unique blende of basic science and technology

Turret-style DC/RF magnetron sputtering system

The in-house designed 8 + 2 target DC/RF turret style sputtering chamber with local gas injection for both inert and reactive sputtering makes this system unique in its design to work on a wide range of material growth with no cross contamination. A chamber base pressure of better than 5x10-9 mbar allows us to work with epitaxial thin films.

Molecular beam epitaxy system

The inhouse designed Molecular beam epitaxy (MBE) system with a base pressure of 5x10-10 mbar has a combination of 5 e-gun evaporation sources, 5 Knudsen cells with RHEED and sample station capable of substrate temperature from ~100K to 1700 K

In-situ Oxygen plasma, heating station and Argon ion milling

The UHV cluster system has dedicated chambers for surface cleaning, controlled oxidation, ion milling for small area samples and heating station upto 2000K for STM surfae preparation

VTI cryostat

The VTI Cryostat with 9T field allows magnetotransport measurements from RT to 1.5K.

Cryogen free LT-STM with 5-1 T vector magnet

Our lab houses the world's first cryogen-free STM with a cryogen_free magnet capable of vertical field of 5T and an in-plane field of upto 1T.

Wire bonder

Al wedge wirebonder

Cleanroom facility with Laserwriter and SEM/EBL

A a part of the shared facility, our cleanroom houses laser writer lithography for maskless patterning, soft lithography and SEM with E-beam lithography

Research Areas

Interface-assisted molecular spintronics

S. Chaudhary (Ph.D Student) Suman R. (Ph.D Student)

Antiferromagnet spintronics

Joynarayan Mukherjee (Post. Doc)

Ferrimagnetic insulators

Swapna Gali(Visiting Researcher)

Topological insulators

Satyaki Sasmal (Ph.D Student) Archit Bharadwaj (Ph.D Student)

Proximity effects using ferromagnetic insulators

Satyaki Sasmal (Ph.D Student) Archit Bharadwaj (Ph.D Student)

Topological superconductivity

Archit Bharadwaj (Ph.D Student)

High Q mirror coating solutions to LIGO India

Members & Alumni

Principal Investigator

Karthik V. Raman, Ph.D 2011 (MIT, USA)

Reader-F (2016- Present)
Fellow-E (2015- 2016)
Ramanujan Fellow, IISc (2013-2015)
Scientist, IBM Research Labs (2011-2013)
2011-2016 Ramanujan Fellow
2015 PACIFICHEM Early Career Chemist Award

Aathif Ahmedof

Facility Manager

Joynarayan Mukherjee

Postdoctoral Fellow

Saurabh Chaudhary

Ph.D Student

Archit Bharadwaj

Ph.D Student

Satyaki Sasmal

Ph.D Student

Suman Mundlia

Ph.D Student

Janmeyjay Panda

Ph.D Student


  1. Gate- and magnetic field- controlled metal-to-insulator transition in the surface state of Bi2Se3 by proximity to a magnetic insulator, arxiv:1907.12770 (2019).
  2. Observation of zero bias conductance peak in topologically trivial hybrid superconducting interfaces, S Mohapatra, S Mathimalar, S Chaudhary and K V Raman, Jour. of Phys. Comm., 3, 4, 2019
  3. “Materials chemistry: A magnetic facelift for non-magnetic metals,” Karthik V. Raman, Jagadeesh S. Moodera. Nature, 524, 42, 2015
  4. “On the Origin of Steep IV Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices,” A. Padilla, G. W Burr, R. S Shenoy, K. V Raman, D. S Bethune, R. M Shelby, C. T Rettner, J. Mohammad, P. Narayanan, A. K. Deb, R. K. Pandey, M. Bajaj, KVRM Murali, B. N. Kurdi & K. Gopalakrishnan. IEEE Transactions on Electron Devices, 62, 963, 2015
  5. “MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays,” R. S Shenoy, G. W Burr, K. Virwani, B. Jackson, A. Padilla, P. Narayanan, C. T Rettner, R. M Shelby, D. S Bethune, K. V Raman, M. BrightSky, E. Joseph, P. M Rice, T. Topuria, A. J Kellock, B. Kurdi & K. Gopalakrishnan. Semicond. Sci. Technol., 29, 104005, 2014
  6. “Tailoring ferromagnet-molecule interfaces: towards molecular spintronics,” Karthik V. Raman, N. Atodiresei & J. S. Moodera. SPIN, 04, 1440014, 2014
  7. “ Interface-assisted spintronics: Tailoring at the molecular scale,” N. Atodiresei & Karthik V. Raman. MRS Bulletin, 39, 596, 2014
  8. “ Interface-assisted molecular spintronics,” Karthik V. Raman. Appl. Phys. Rev., 1, 031101, 2014
  9. “ Focusing on the molecular scale,” Karthik V. Raman. Nature Nanotech., 8, 886, 2013
  10. “Interface engineered templates for molecular spin memory devices,” Karthik V. Raman, Alexander M. Kamerbeek, Arup Mukherjee, Nicolae Atodiresei et al. Nature, 493, 509, 2013
  11. “New method of spin injection into organic semiconductors using spin filtering tunnel barriers,” K. V. Raman, J. Chang, J. S. Moodera. Org. Electronics, 12, 1275, 2011
  12. “ Effect of molecular ordering on spin and charge injection in rubrene,” K. V. Raman, S. M. Watson, J. H. Shim, J. A. Borchers, J. Chang, J. S. Moodera. Phy. Rev. B, 80, 195212, 2009
  13. “Determining exchange splitting in a magnetic semiconductor by spin-filter tunneling,” TS Santos, JS Moodera, KV Raman, E Negusse, J Holroyd, J Dvorak, M Liberati, YU Idzerda, E Arenholz. Phys. Rev. Lett., 101, 147201, 2008
  14. “Large spin diffusion length in an amorphous organic semiconductor,” JH Shim, KV Raman, YJ Park, TS Santos, GX Miao, B Satpati, JS Moodera. Phys. Rev. Lett., 100, 226603, 2008


With our in-house expertise in design, manufacturing and assembly of Ultra high vacuum system, its peripherals and cryogenics we offer cost-effective solution to a number of laboratory accessories. Our custom design solutions include MBE, sputtering, Knudsen cell, Magnetic manipulators and others. Some of our in-house designed systems can be seen at Lab facilities.

We also offer coating services for Gold, Tantalum, Platinum, Vanadium. For any other coating requirements, please contact Mr. Aathif Ahmedof at Contact: P: (+91) 040 2020-3111


Dr. Karthik V. Raman
Tata Institute of Fundamental Research,
Hyderabad, India
P: (+91) 040 2020-3062