Lab Updates

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    Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic noncollinear antiferromagnet Mn3Pt thin films Phys. Rev. Materials 5, 0124201 Link
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    Robust monolayer exchange-bias effect in molecular crane-pulley response at magnetic surface. Phys. Rev. Applied 14, 024095 Link
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    Virtual online conference series on - Aspects of Condensed Matter Physics in Quantum computing and sensing Link

Who we are.

"The mind that is open to new ideas never returns to its original size." - Albert Einstein


Lab Facilities

We design, assemble and integrate our UHV cluster vacuum systems. Our current system houses interconnected MBE, 8 target turret style DC/RF sputtering, oxygen plasma, ion milling/heating station and LT-STM.

Research areas

Our group research activity spans molecular spintronics, proximity effect studies at hybrid interfaces to explore topological nature of interface states using wide classes of materials viz. topological insulators, superconductors (s-type and pcnictides), ferromagnetic insulators and antiferromagnets.

UHV Cluster system

A custom built interconnected Ultra high vacuum systems for thin film growth and in-situ characterizations. This facility, unique in the country, allows in-situ transfer of samples between dedicated growth and characterization UHV chambers. Working with this sytem provides a unique blende of basic science and technology

Turret-style DC/RF magnetron sputtering system

The in-house designed 8 + 2 target DC/RF turret style sputtering chamber with local gas injection for both inert and reactive sputtering makes this system unique in its design to work on a wide range of material growth with no cross contamination. A chamber base pressure of better than 5x10-9 mbar allows us to work with epitaxial thin films.

Molecular beam epitaxy system

The inhouse designed Molecular beam epitaxy (MBE) system with a base pressure of 5x10-10 mbar has a combination of 5 e-gun evaporation sources, 5 Knudsen cells with RHEED and sample station capable of substrate temperature from ~100K to 1700 K

In-situ Oxygen plasma, heating station and Argon ion milling

The UHV cluster system has dedicated chambers for surface cleaning, controlled oxidation, ion milling for small area samples and heating station upto 2000K for STM surfae preparation

VTI cryostat

The VTI Cryostat with 9T field allows magnetotransport measurements from RT to 1.5K.

Cryogen free LT-STM with 5-1 T vector magnet

Our lab houses the world's first cryogen-free STM with a cryogen_free magnet capable of vertical field of 5T and an in-plane field of upto 1T.

Wire bonder

Al wedge wirebonder

Cleanroom facility with Laserwriter and SEM/EBL

A a part of the shared facility, our cleanroom houses laser writer lithography for maskless patterning, soft lithography and SEM with E-beam lithography


Research Areas

Interface-assisted molecular spintronics

S. Chaudhary (Ph.D Student) Suman R. (Ph.D Student)

Antiferromagnet spintronics

Joynarayan Mukherjee (Post. Doc), Janmey J. Panda (Ph.D Student)

Topological insulators

Satyaki Sasmal (Ph.D Student) Archit Bharadwaj (Ph.D Student)

Topological superconductivity

Archit Bharadwaj (Ph.D Student)


Members & Alumni

Principal Investigator

Karthik V. Raman, Ph.D 2011 (MIT, USA)

Reader-F (2016- Present)
Fellow-E (2015- 2016)
Ramanujan Fellow, IISc (2013-2015)
Scientist, IBM Research Labs (2011-2013)
AWARDS:
2011-2016 Ramanujan Fellow
2015 PACIFICHEM Early Career Chemist Award
2020 INSA Young Scientist Award

Aathif Ahmedof

Facility Manager

Dhavala Suri

Postdoctoral Fellow

Saurabh Chaudhary

Ph.D Student

Archit Bharadwaj

Ph.D Student

Satyaki Sasmal

Ph.D Student

Suman Mundlia

Ph.D Student

Alumni

Joynarayan Mukherjee (post doctoral researcher at TIFRH)
Currently lecturer in Kolkata
S. Mathimalar (post doctoral researcher at TIFRH)
Currently at Weizmann Institute of Science (post doctoral fellow)
Rajasekhar Pothala (post doctoral researcher at TIFRH)
Currently at Uppsala University, Sweden (post doctoral fellow)
Sambit Mohapatra (SRF at TIFRH)
Currently a Ph.D student at University of Strasbourg, France
Swapnil Pathak (SRF at TIFRH)
Currently a Ph.D student at University of Strasbourg, France

Publications

  1. An all cryogen-free integration of scanning tunneling microscope with superconducting vector magnet in a vacuum cluster assembly with low spectral noise, Saurabh Chaudhary, Janmey Panda, Suman Mundlia, S. Mathimalar, Aathif Ahmedof, and Karthik Raman, Review of Scientific Instruments,(accepted) 2021
  2. Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic noncollinear antiferromagnet Mn3Pt thin films, J. Mukherjee, T. S. Suraj, H. Basumatary, K. Sethupathi, and K. V. Raman, Phys. Rev. Materials, 5, 0124201, 2021
  3. Robust monolayer exchange-bias effect in molecular crane-pulley response at magnetic surface, S. Mundlia*, S. Chaudhary*, L. Peri, A. Bhardwaj, J. J. Panda, S. Sasmal and K. V. Raman, Phys. Rev. Appl., 14, 024095, 2020 (* equal contribution)
  4. Signature of gate-controlled magnetism and localization effects at Bi2Se3/EuS interface, S. Mathimalar*, S. Sasmal*, A. Bhardwaj, S. Abhaya, R. Pothala, S. Chaudhary, B. Satpati and K. V. Raman, npj Quantum Materials, 5, 64, 2020 (* equal contribution)
  5. Probing Proximity-Tailored High Spin-Orbit Coupling in 2D Materials, K. R. Sahoo, T. P. Chakravarthy, R. Sharma, S. Bawari, S. Mundlia, S. Sasmal, K. V. Raman, T. N. Narayanan, N. K. Viswanathan, Adv. Quantum Technologies, 2000042, 2020
  6. Observation of zero bias conductance peak in topologically trivial hybrid superconducting interfaces, S Mohapatra, S Mathimalar, S Chaudhary and K V Raman, Jour. of Phys. Comm., 3, 4, 2019
  7. “Materials chemistry: A magnetic facelift for non-magnetic metals,” Karthik V. Raman, Jagadeesh S. Moodera. Nature, 524, 42, 2015
  8. “On the Origin of Steep IV Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices,” A. Padilla, G. W Burr, R. S Shenoy, K. V Raman, D. S Bethune, R. M Shelby, C. T Rettner, J. Mohammad, P. Narayanan, A. K. Deb, R. K. Pandey, M. Bajaj, KVRM Murali, B. N. Kurdi & K. Gopalakrishnan. IEEE Transactions on Electron Devices, 62, 963, 2015
  9. “MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays,” R. S Shenoy, G. W Burr, K. Virwani, B. Jackson, A. Padilla, P. Narayanan, C. T Rettner, R. M Shelby, D. S Bethune, K. V Raman, M. BrightSky, E. Joseph, P. M Rice, T. Topuria, A. J Kellock, B. Kurdi & K. Gopalakrishnan. Semicond. Sci. Technol., 29, 104005, 2014
  10. “Tailoring ferromagnet-molecule interfaces: towards molecular spintronics,” Karthik V. Raman, N. Atodiresei & J. S. Moodera. SPIN, 04, 1440014, 2014
  11. “ Interface-assisted spintronics: Tailoring at the molecular scale,” N. Atodiresei & Karthik V. Raman. MRS Bulletin, 39, 596, 2014
  12. “ Interface-assisted molecular spintronics,” Karthik V. Raman. Appl. Phys. Rev., 1, 031101, 2014
  13. “ Focusing on the molecular scale,” Karthik V. Raman. Nature Nanotech., 8, 886, 2013
  14. “Interface engineered templates for molecular spin memory devices,” Karthik V. Raman, Alexander M. Kamerbeek, Arup Mukherjee, Nicolae Atodiresei et al. Nature, 493, 509, 2013
  15. “New method of spin injection into organic semiconductors using spin filtering tunnel barriers,” K. V. Raman, J. Chang, J. S. Moodera. Org. Electronics, 12, 1275, 2011
  16. “ Effect of molecular ordering on spin and charge injection in rubrene,” K. V. Raman, S. M. Watson, J. H. Shim, J. A. Borchers, J. Chang, J. S. Moodera. Phy. Rev. B, 80, 195212, 2009
  17. “Determining exchange splitting in a magnetic semiconductor by spin-filter tunneling,” TS Santos, JS Moodera, KV Raman, E Negusse, J Holroyd, J Dvorak, M Liberati, YU Idzerda, E Arenholz. Phys. Rev. Lett., 101, 147201, 2008
  18. “Large spin diffusion length in an amorphous organic semiconductor,” JH Shim, KV Raman, YJ Park, TS Santos, GX Miao, B Satpati, JS Moodera. Phys. Rev. Lett., 100, 226603, 2008

Services

With our in-house expertise in design, manufacturing and assembly of Ultra high vacuum system, its peripherals and cryogenics we offer cost-effective solution to a number of laboratory accessories. Our custom design solutions include MBE, sputtering, Knudsen cell, Magnetic manipulators and others. Some of our in-house designed systems can be seen below.

We also offer coating services for Gold, Tantalum, Platinum, Vanadium. For any other coating requirements, please contact us.

MBE system
Turret-style DC/RF magnetron sputtering system
K-Cell

GET IN TOUCH

Dr. Karthik V. Raman
Tata Institute of Fundamental Research,
Hyderabad, India
P: (+91) 040 2020-3062